Vertical Field Effect Transistor – VFET

* Link to google scholar – Keli Seidel (click here)

Vertical field effect transistor (VFET) or Vertical organic field effect transistor (VOFET)

*What is a Vertical Field Effect Transistor? How it works?
What is the advantage of using vertical architecture instead the planar architecture to develop a FET?
This architecture have been used to overcome the problem of low mobility of charge carriers in organic semiconductors together with the long channel (a few micrometers) used in the planar (organic) field-effect transistor (FET) geometry. This combination of features requires that the FET works with high operational voltage and long response times due to the long pathways of the charge carriers along the transistor channel is needed.

On the other hand, in vertical field effect transistor the channel has just a few nanometers of length giving to that device the possibility of working with low voltages, different electrical configurations, rapid response, etc …

-Comparing the electrical characterization of the FETs with VFETs (or VOFETs)!

This architecture have all the layers stacked obtaining a channel length of few nanometers, that is, in the order of the thickness film. As a consequence, the electrical characterization shows that this devices can present behavior like: very low voltages work,  ambipolar voltage, ambipolar gate modulation, non-saturation regime, etc…

Vertical (Organic) Field Effect Transistor (APPLICATIONS) -> VOLETs (click here)

in the sequence, see some figures (with their respective references) that illustrate this geometry.

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PANI_VFET

Figure removed from: Vertical organic field effect transistor using sulfonated polyaniline/aluminum bilayer as intermediate electrode. Authors: Keli F. Seidel, et al.
DOI: 10.1007/s10854-012-0876-5

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PVA_VOFET

Figure from: Low voltage vertical organic field-effect transistor with polyvinyl alcohol as gate insulator. Authors: Lucieli Rossi, Keli F. Seidel, Wagner S. Machado, and Ivo A. Hümmelgen.
doi: http://dx.doi.org/10.1063/1.3660406